32-Gb/s NRZ and 40-Gb/s PAM-4 Transimpedance Amplifier Paralleling with a Differentiator for Bandwidth Enhancement in 90-nm CMOS Technology
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,Signal Processing
Link
https://link.springer.com/content/pdf/10.1007/s00034-021-01826-2.pdf
Reference20 articles.
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2. C.F. Campbell, M.S. Heins, M.Y. Kao, M.E. Muir, J.M. Carroll A 0.15-μm GaAs MHEMT transimpedance amplifier IC for 40-Gb/s applications, in IEEE MTT-S International Microwave Symposium Digest (2002), pp. 79–82. https://doi.org/10.1109/MWSYM.2002.1011563
3. D. Caruth, S.C. Shen, D. Chan, M. Feng, J. Schutt-Aine, A 40 Gb/s integrated differential PIN+ TIA with DC offset control using InP SHBT technology, in 24th Annual Technical Digest GaAs IC Symposium (2002), pp. 59–62. https://doi.org/10.1109/10.1109/GAAS.2002.1049029
4. Q. Cheng, M. Bahadori, M. Glick, S. Rumley, K. Bergman, Recent advances in optical technologies for data centers: a review. Optica 5, 1354–1370 (2018). https://doi.org/10.1364/OPTICA.5.001354
5. R. Costanzo, S.M. Bowers, A current reuse regulated cascode CMOS transimpedance amplifier with 11-GHz bandwidth. IEEE Microw. Wirel. Compon. Lett. 28, 816–818 (2018). https://doi.org/10.1109/LMWC.2018.2854594
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