Thermal Analysis of High-Power InGaAs–InP Photodiodes-Reference-Cited by-同舟云学术

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Thermal Analysis of High-Power InGaAs–InP Photodiodes

Published:2006-12 Issue:12 Volume:42 Page:1255-1258
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Duan Ning,Wang Xin,Li Ning,Liu Han-Din,Campbell Joe C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/3/4012270/04015582.pdf?arnumber=4015582

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on fiber coupling of high-speed and high-power MUTC-PD in packaging;2023 10th International Forum on Electrical Engineering and Automation (IFEEA);2023-11-03

2. High-speed and high-power modified uni-traveling carrier photodiode with an electric field control layer;Ninth Symposium on Novel Photoelectronic Detection Technology and Applications;2023-04-04

3. Simulation and design of a high-speed and high-power modified uni-traveling carrier photodiode based on the electric field distribution in the depletion region;Applied Optics;2023-01-30

4. Photodiodes for Terahertz Applications;IEEE Journal of Selected Topics in Quantum Electronics;2022-03

5. First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding;physica status solidi (a);2020-09-29

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