Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage-Reference-Cited by-同舟云学术

Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage

Published:2024-04 Issue:4 Volume:71 Page:2393-2398
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xiong Wen¹^ORCID,Luo Binbin¹,Meng Wei¹,Wu Xiaohan¹,Zhu Bao¹,Ding Shi-Jin¹^ORCID

Affiliation:

1. School of Microelectronics, Fudan University, Shanghai, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10439061.pdf?arnumber=10439061

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3. Computational Associative Memory Based on Monolithically Integrated Metal-Oxide Thin Film Transistors for Update-Frequent Search Applications

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. First demonstration of oxide semiconductor nanowire transistors: A novel digital etch technique, IGZO channel, nanowire width down to ~20 nm, and ion exceeding 1300 μA/μm;Han

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