An Improved Turn-on Switching Transient Model of 10 kV SiC MOSFET
Author:
Affiliation:
1. The University of Tennessee,Knoxville,TN,USA
Funder
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9773364/9773365/09773432.pdf?arnumber=9773432
Reference23 articles.
1. Accurate Analytical Switching-On Loss Model of SiC MOSFET Considering Dynamic Transfer Characteristic and Q gd
2. Modeling and Analysis of SiC MOSFET Switching Oscillations
3. Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
4. Datasheet Driven Silicon Carbide Power MOSFET Model
5. New generation 10kV SiC power MOSFET and diodes for industrial applications;casady;Proc Int Exhib Conf Power Electron Intell Motion Renewable Energy Manage,0
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1. Temperature Sensitive Electrical Parameters Selection for 10 kV SiC Power Module;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
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