Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence-Reference-Cited by-同舟云学术

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Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

Published:2007-03 Issue:2 Volume:22 Page:353-363
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

McNutt Ty R.,Hefner Allen R.,Mantooth H. Alan,Berning David,Ryu Sei-Hyung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/63/4118287/04118319.pdf?arnumber=4118319

Cited by 121 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. A Gate Degradation Independent Online Junction Temperature Estimation Method for SiC MOSFETs Based on Residual Resistance;IEEE Transactions on Power Electronics;2024-10

4. Calculation and Analysis of the Dynamic Turn-On Process of SiC MOSFET Based on a Piecewise Linearization Method;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-08

5. Refining Accuracy: A Quasi-Floating Channel SPICE Model for Third-Quadrant SiC MOSFET Analysis in Both Planar and Trench Structures;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

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