Gate Drive Circuit with In situ Condition Monitoring System for Detecting Gate Oxide Degradation of SiC MOSFETs
Author:
Affiliation:
1. Tokyo Metropolitan University,Grad. School of Systems Design,Tokyo,Japan
Funder
Japan Society for the Promotion of Science
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9773364/9773365/09773501.pdf?arnumber=9773501
Reference39 articles.
1. Design a Continuous Switching Test Circuit for Power Devices to Evaluate Reliability
2. Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test
3. Semiconductor Material and Device Characterization
4. Condition Monitoring of SiC MOSFETs Utilizing Gate Leakage Current
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Multi-Metrics In Situ Aging Detector for SiC Power MOSFET Modules with Full Driver-Integration Capability;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
2. Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs;IEEE Open Journal of Power Electronics;2024
3. Reliability and Condition Monitoring of Sic Power MOSFETs;SSRN Electronic Journal;2024
4. Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Transfer Characteristic with Temperature Compensation;IEEE Transactions on Transportation Electrification;2023
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