Advancement of GaN HEMT Power Electronics on Diamond Substrate
Author:
Affiliation:
1. Monte Rosa Technology,San Francisco Bay Areas,CA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9899435/9899496/09899657.pdf?arnumber=9899657
Reference28 articles.
1. Polycrystalline Diamond Characterisations for High End Technologies;mallik;Diamonds in Scientific Research and High Technology,2019
2. Thickness Dependence and Anisotropy of Capped Diamond Thermal Conductivity on Cooling of Pulse-Operated GaN HEMTs
3. Thermal Design Rules of AlGaN/GaN-Based Microwave Transistors on Diamond
4. Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz
5. Fujitsu Technology Bonds Single Crystal Diamond and SiC at Room Temperature; Enables Boost to Radar Performance,2017
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Progress in the semiconductor/diamond heterogeneous integrations: Technical methods, interfacial phonon transport, and thermal characterizations;Surfaces and Interfaces;2024-03
2. Development of Diamond Device-Level Heat Spreader for the Advancement of GaN HEMT Power and RF Electronics;IEEE Transactions on Device and Materials Reliability;2023-12
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