The Fundamentals of NAND Flash Memory: Technology for tomorrow’s fourth industrial revolution
Author:
Affiliation:
1. President of technology, Samsung Electronics, Hwasung city, South Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/4563670/9805474/09805634.pdf?arnumber=9805634
Reference46 articles.
1. 13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface
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3. A new ruler on the storage market: 3D-NAND flash for high-density memory and its technology evolutions and challenges on the future
4. 19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming
5. Ushering in the 3D memory era with V-NAND;elliott;Proc Flash Memory Summit Special Keynote B,0
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