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A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

  • Published:2019-03 Issue:1 Volume:7 Page:62-70
  • ISSN:2168-6777
  • Container-title:IEEE Journal of Emerging and Selected Topics in Power Electronics
  • language:
  • Short-container-title:IEEE J. Emerg. Sel. Topics Power Electron.

Author:

Duan YaoqiangORCID,Xiao FeiORCID,Luo Yifei,Iannuzzo FrancescoORCID

Funder

National Natural Science Foundation of China

National Key Basic Research Program through the China 973 Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of an IGBT Behavioral Electrothermal Model;2023 IEEE 8th Southern Power Electronics Conference (SPEC);2023-11-26

2. Improved Parameterization Methodology for a Field-Stop Trench-Gate IGBT Physical Model by Switching Feature Partitioning;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-08

3. Application of the Averaged Model of the Diode transistorSwitch for Modelling Characteristics of a Boost Converter with an IGBT;International Journal of Electronics and Telecommunications;2023-07-26

4. Temporal and Spatial Differences in Thermal Transfer Behavior of IGBTs Caused by the Baseplate and Die-Attach Solder Cracking;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-12

5. Investigation on Excess Carrier Distribution for a Quasi-2D Lumped-Charge Insulated Gate Bipolar Transistor Model;2022 IEEE International Power Electronics and Application Conference and Exposition (PEAC);2022-11-04
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