An Analytical Carrier Recombination Turn-Off Transient Model for High-Voltage IGBTs-Reference-Cited by-同舟云学术

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An Analytical Carrier Recombination Turn-Off Transient Model for High-Voltage IGBTs

Published:2024-06 Issue:6 Volume:39 Page:7096-7108
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Zhang Zhiyuan¹^ORCID,He Hengxin¹^ORCID,Li Kejie²^ORCID,Xiang Nianwen²^ORCID,Chen Weijiang³^ORCID

Affiliation:

1. State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Hubei, China

2. School of Electrical and Automation Engineering, Hefei University of Technology, Anhui, China

3. State Grid Corporation of China, Beijing, China

Funder

National Natural Science Foundation of China

National Key R&D Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/63/10505873/10472063.pdf?arnumber=10472063

Reference53 articles.

1. A Lumped Thermal Model Including Thermal Coupling and Thermal Boundary Conditions for High-Power IGBT Modules

2. Modeling and Analysis of a New Pressure Contact Package for High-Current Large-Die IGBTs

3. An FPGA-Based IGBT Behavioral Model With High Transient Resolution for Real-Time Simulation of Power Electronic Circuits

4. Catastrophic failure and fault-tolerant design of IGBT power electronic convertersAn overview;Wu,2013

5. Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT

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