Hard-Switching 650-V GaN HEMTs in an 800-V DC-Grid System With No-Diode-Clamping Active-Balancing Three-Level Topology
Author:
Funder
Robert Bosch
GaN Systems Inc
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology
Link
http://xplorestaging.ieee.org/ielx7/6245517/8704164/08478383.pdf?arnumber=8478383
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