Enhanced carrier confinement in AlInGaN-InGaN quantum wells in near ultraviolet light-emitting diodes-Reference-Cited by-同舟云学术

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Enhanced carrier confinement in AlInGaN-InGaN quantum wells in near ultraviolet light-emitting diodes

Published:2006-06 Issue:11 Volume:18 Page:1276-1278
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Sung-Ho Baek ,Jeom-Oh Kim ,Min-Ki Kwon ,Il-Kyu Park ,Seok-In Na ,Ja-Yeon Kim ,Bongjin Kim ,Seong-Ju Park

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/34275/01634568.pdf?arnumber=1634568

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures;Journal of Electronic Materials;2020-01-08

2. High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells;Journal of Materials Chemistry C;2020

3. Engineering of K3YSi2O7 To Tune Photoluminescence with Selected Activators and Site Occupancy;Chemistry of Materials;2019-08-13

4. Optical stimulated emission in AlGaN/InGaN ultraviolet multi-quantum-well structures;Light-Emitting Devices, Materials, and Applications;2019-03-01

5. Slow Electron Making More Efficient Radiation Emission;Scientific Reports;2018-03-20

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