Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHz-Reference-Cited by-同舟云学术

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Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHz

Published:1990 Issue:10 Volume:38 Page:1381-1390
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Wang N.L.,Sheng N.H.,Chang M.-C.F.,Ho W.J.,Sullivan G.J.,Sovero E.A.,Higgins J.A.,Asbeck P.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx1/22/2131/00058675.pdf?arnumber=58675

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superiority of common-base to common-emitter heterojunction bipolar transistors;Applied Physics Letters;2010-09-27

2. CMOS Anti-Self-Biasing effect and its implication in analog/RF circuit design;2007 7th International Conference on ASIC;2007-10

3. On The Operation Configuration of SiGe HBTs Based on Power Gain Analysis;IEEE Transactions on Electron Devices;2005-02

4. A two-dimensional analytical subthreshold behavior model for short-channel AlGaAs/GaAs HFETs;Microelectronics Reliability;2004-07

5. A simplified model for the effect of interfinger metal on maximum temperature rise in a multifinger bipolar transistor;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2003-01

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