A two-dimensional analytical subthreshold behavior model for short-channel AlGaAs/GaAs HFETs

Author:

Chiang T.K

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Shur MS, Gaska R, Khan A, Simin G. Wide band gap electronic devices. IEEE International Caracas Conference on Devices, Circuits and Systems. 2002:DO51-1- DO51-8

2. Moon BJ, Byun YH, Lee KR, Shur MS. Continuous heterostructure field effect transistor model. IEEE International Symposium on Circuits and Systems. 1990;4:3069–72

3. 200 W GaAs-based MOSFET power amplifier for W-CDMA base stations;Ishida;IEDM,1999

4. A very wide bandwidth digital VCO using quadrature frequency multiplication and division implemented in AlGAAs/GaAs HBTs;Campbell;IEEE Trans. VLSI Syst.,1998

5. Liou LL, Bayraktaroglu B, Huang CI. Thermal ranway analysis of high power AlGaAs/GaAs heterojunction bipolar transistors. IEEE/Cornell Conference on Advanced Concept 1998:468–77

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