Extraction of the induced gate noise, channel thermal noise and their correlation in sub-micron MOSFETs from RF noise measurements-Reference-Cited by-同舟云学术

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Extraction of the induced gate noise, channel thermal noise and their correlation in sub-micron MOSFETs from RF noise measurements

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Container-title:ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)
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Author:

Chih-Hung Chen ,Deen M.J.,Matloubian M.,Yuhua Cheng

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7387/20075/00928651.pdf?arnumber=928651

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. $\mathrm{I}_{\text{GS}}-\mathrm{I}_{\text{GD}}$ Gate Current Noise Model at Low Frequency;2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2024-06-09

2. High-Frequency Noise Modeling of MOSFETs for Ultra Low-Voltage RF Applications;IEEE Transactions on Microwave Theory and Techniques;2015-01

3. Substrate-Induced Noise Model and Parameter Extraction for High-Frequency Noise Modeling of Sub-Micron MOSFETs;IEEE Transactions on Microwave Theory and Techniques;2014-09

4. The extraction and modeling of intrinsic RF noise sources in 0.13 /spl mu/m nMOSFETs;IEEE MTT-S International Microwave Symposium Digest, 2005.;2005

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