A 24-31 GHz GaN-on-Si Power Amplifier MMIC
Author:
Affiliation:
1. School of Electronic and Information Engineering, South China University of Technology,Guangzhou,China,510640
Funder
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9790065/9790355/09790428.pdf?arnumber=9790428
Reference12 articles.
1. Integration of Self-Biased Circulators on GaN/SiC for Ka-band RF application
2. 10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology;potier;Proc 1st IEEE Eur Microwave Integrated Circuits Conf (EuMIC),2019
3. A 4W 37.5-42.5 GHz Power Amplifier MMIC in GaN on Si Technology
4. 6W Ka Band Power Amplifier and 1.2dB NF X-Band Amplifier Using a 100nm GaN/Si Process;leblanc;Proc IEEE Compound Semiconductor Integr Circuit Symp (CSICS),2016
5. Theory and Design Methodology for Reverse-Modulated Dual-Branch Power Amplifiers Applied to a 4G/5G Broadband GaN MMIC PA Design
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 24.25-28 GHz Wideband Power Amplifier in 150-nm GaN-on-SiC pHEMT Technology;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27
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