Noncontacting measurement of thickness of thin titanium silicide films using spectroscopic ellipsometer
Author:
Affiliation:
1. Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx3/55/14528/00663536.pdf?arnumber=663536
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electro-physical technique for post-fabrication measurements of CMOS process layer thicknesses;Journal of Research of the National Institute of Standards and Technology;2007-09
2. Characterization of C54 titanium silicide thin films by spectroscopy, microscopy and diffraction;Journal of Physics D: Applied Physics;2007-08-16
3. Method for Measuring Thickness of Dielectric Films Using Microdielectric Fringe-Effect Sensors;Analytical Chemistry;2006-04-07
4. Nondestructive Analytical Tools for Characterization of Thin Titanium Silicide Films Prepared by Conventional and Direct Step Silicidation with Enhanced Transition;Journal of The Electrochemical Society;1999-09-01
5. Characterization of thin titanium silicide films prepared by PASET and a conventional process;Semiconductor Science and Technology;1999-08-27
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