Nondestructive Analytical Tools for Characterization of Thin Titanium Silicide Films Prepared by Conventional and Direct Step Silicidation with Enhanced Transition-Reference-Cited by-同舟云学术

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Nondestructive Analytical Tools for Characterization of Thin Titanium Silicide Films Prepared by Conventional and Direct Step Silicidation with Enhanced Transition

Published:1999-09-01 Issue:9 Volume:146 Page:3440-3447
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kal S.¹,Ryssel H.²

Affiliation:

1. Microelectronics Center, Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur‐721302, India

2. Lehrstuhl fuer Elektronische Bauelemente, Universitaet Erlangen‐Nuernberg, 91058 Erlangen, Germany

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1392493/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopic Ellipsometry Investigation of Nickel Germanide Formation;Journal of The Electrochemical Society;2007

2. Semiconductor Contact Technology;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22

3. The Effect of Film Thickness on the C40 TiSi[sub 2] to C54 TiSi[sub 2] Transition Temperature;Journal of The Electrochemical Society;2005

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