Modeling of Distributed Effects in Modern MOS Transistors for Millimeter Wave Applications
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7419296/7389380.pdf?arnumber=7389380
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Physical Insight Based Neural Network Model for Small Signal Behavior of MOSFET in Terahertz Applications;2023 International Symposium of Electronics Design Automation (ISEDA);2023-05-08
2. Distributed Small-Signal Equivalent Circuit Model and Parameter Extraction for SiGe HBT;IEEE Access;2019
3. Distributed Unique-Size MOS Technique: A Promising Universal Approach Capable of Resolving Circuit Design Bottlenecks of Modern Era;Circuits, Systems, and Signal Processing;2018-06-23
4. Modeling the Distributive Effects of RC Transmission Line Using Recursive Segmentation and Applications to MOSFETs and BJTs;IEEE Transactions on Electron Devices;2016-09
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