A Physical Insight Based Neural Network Model for Small Signal Behavior of MOSFET in Terahertz Applications
Author:
Affiliation:
1. School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China,Chengdu,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10218344/10218369/10218643.pdf?arnumber=10218643
Reference9 articles.
1. Deep-Learning-Assisted Physics-Driven MOSFET Current-Voltage Modeling
2. Neuro-Space Mapping technique for nonlinear device modeling and large signal simulation;lei;Microwave Symposium Digest 2003 IEEE MTT-S International IEEE,0
3. Learning representations by back-propagating errors
4. A small-signal MOSFET model for radio frequency IC applications
5. A small signal de-to-high-frequency nonquasi static model for the four-terminal MOSFET valid in all regions of operation;bagheri;IEEE Transactions on Electron Devices,1985
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