Author:
Lin Xinnan,Zhang Baili,Xiao Ying,Lou Haijun,Zhang Lining,Chan Mansun
Funder
National Science Funds of China
Guangdong Natural Science Project
Hong Kongs University Grant Council Area of Excellence Project
Shenzhen Science and Technology Plan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
18 articles.
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1. Recent Advances in Gate Dielectrics for Enhanced Leakage Current Management and Device Performance;Transactions on Electrical and Electronic Materials;2024-05-09
2. Analysis of the non-monotonic dependence of FOM of β-Ga2O3 based Junctionless Field Effect Transistor on doping profile linearity in the drift region;2024 7th International Conference on Devices, Circuits and Systems (ICDCS);2024-04-23
3. A Continuous and Closed-Form Trans-Capacitance Model for Double-Gate Junctionless Transistors;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24
4. Machine Learning Assisted Device Modeling: A Survey;2023 5th International Conference on Inventive Research in Computing Applications (ICIRCA);2023-08-03
5. A Surface Potential Based Compact Model for β-Ga2O3 Power MOSFETs;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07