A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects-Reference-Cited by-同舟云学术

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A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects

Published:2016-04 Issue:4 Volume:63 Page:1428-1436
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nour Mohamed,Celik-Butler Zeynep,Sonnet Arif,Hou Fan-Chi,Tang Shaoping,Mathur Guru

Funder

Semiconductor Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7438947/7416629.pdf?arnumber=7416629

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Integral Methodology for Predicting Long-Term RTN;IEEE Transactions on Electron Devices;2022-07

2. Identification of Channel Hot Carrier Stress-Induced Oxide Traps Leading to Random Telegraph Signals in pMOSFETs;IEEE Transactions on Electron Devices;2021-02

3. On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude;IEEE Access;2021

4. Investigation of Quantization Effects on RTS Due to Oxide Traps Induced by Channel Hot-Carrier-Stressing in pMOSFETs;IEEE Transactions on Device and Materials Reliability;2020-12

5. Channel hot carrier induced volatile oxide traps responsible for random telegraph signals in submicron pMOSFETs;Solid-State Electronics;2020-02

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