Identifying a Double-Energy-Level Trap Center in a GaN HEMT by Performing Three-Stage Pulse Measurements
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7548080/07533437.pdf?arnumber=7533437
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08
2. Look-up table based I-V model for GaN HEMT devices for Microwave Applications;Microprocessors and Microsystems;2021-06
3. Experimental Characterization of Charge Trapping Dynamics in 100-nm AlN/GaN/AlGaN-on-Si HEMTs by Wideband Transient Measurements;IEEE Transactions on Electron Devices;2020-08
4. Investigation on the device geometry-dependent reverse recovery characteristic of AlGaN/GaN lateral field-effect rectifier (L-FER);Superlattices and Microstructures;2018-08
5. A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation;IEEE Transactions on Microwave Theory and Techniques;2018
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