Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors-Reference-Cited by-同舟云学术

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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors

Published:2016-03 Issue:3 Volume:63 Page:933-939
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Elmessary Muhammad A.,Nagy Daniel,Aldegunde Manuel,Lindberg Jari,Dettmer Wulf G.,Peric Djordje,Garcia-Loureiro Antonio J.,Kalna Karol

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ieeexplore.ieee.org/iel7/16/7419296/07397987.pdf

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes;IEEE Journal of the Electron Devices Society;2024

2. Multilevel 3-D Device Simulation Approach Applied to Deeply Scaled Nanowire Field Effect Transistors;IEEE Transactions on Electron Devices;2022-09

3. 3-D Monte Carlo device simulator for variability modeling of p-MOSFETs;Journal of Computational Electronics;2020-02-17

4. Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes;IEEE Access;2020

5. A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs;Materials;2019-07-26

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