Excellent Temperature Dependence of Retention Energy and Large Tunnel Magnetoresistance of MTJs With Strain-Induced Magnetic Anisotropy for SOT-MRAMs With High Write Efficiency-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Excellent Temperature Dependence of Retention Energy and Large Tunnel Magnetoresistance of MTJs With Strain-Induced Magnetic Anisotropy for SOT-MRAMs With High Write Efficiency

Published:2024-09 Issue:9 Volume:60 Page:1-5
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Yoda Hiroaki¹^ORCID,Araki Satoru¹,Ohsawa Yuichi¹,Yoda Taisuke¹,Yamazaki Yuichi¹,Kishi Tatsuya²,Yoda Tomomi¹^ORCID

Affiliation:

1. YODA-S, Inc., Tsukuba, Ibaraki, Japan

2. AdvanceSoft Corporation, Tokyo, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/20/10649776/10539988.pdf?arnumber=10539988

Reference12 articles.

1. Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy

2. Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM

3. Pt/Co/oxide and oxide/Co/Pt electrodes for perpendicular magnetic tunnel junctions

4. Large tunnel magnetoresistance of over 200% in MgO-based magnetic tunnel junction with perpendicular magnetic anisotropy;Nishiyama

5. Ultra-highly efficient SOT-writing in MTJs with strain-induced magnetic anisotropy

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP