Ultra-highly efficient SOT-writing in MTJs with strain-induced magnetic anisotropy

Abstract

In order to break through limits of conventional MRAMs, MTJs with strain-induced magnetic anisotropy were intensively tested as SOT-MRAM cells. Small critical switching-current of 10–25 μA and switching-voltage of about 0.055 V, and almost no retention energy dependence of them were predicted and confirmed by experiments. Finally, high write efficiency of 1750 kBT/V (4.1 kBT/μA) and high write-power efficiency of 100 [kBT/(μA·V)] were obtained.