A Study of a Newly Developed Kelvin-Source Driven SiC-VMOSFET on a High-Power Single-Ended Wireless EV Charger-Reference-Cited by-同舟云学术

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A Study of a Newly Developed Kelvin-Source Driven SiC-VMOSFET on a High-Power Single-Ended Wireless EV Charger

Published:2019-11 Issue: Volume: Page:
ISSN:
Container-title:2019 8th International Conference on Renewable Energy Research and Applications (ICRERA)
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Author:

Iwanaga Taichi,Omori Hideki,Sakamoto Kunihiro,Morizane Toshimitsu,Kimura Noriyuki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8974144/8996503/08997100.pdf?arnumber=8997100

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of Half-Bridge Switching Power Module Based on Parallel-Connected SiC MOSFETs for LLC Resonant Converter with Symmetrical Structure and Low Parasitic Inductance;Electronics;2024-02-29

2. A New Dual-Active Single-Ended 6kW Bidirectional WPT Systems with Phase-Shift Control Methods for Vehicle to Homes;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

3. A Single-Ended Hybrid Resonant Converter With High Misalignment Tolerance;IEEE Transactions on Power Electronics;2022-10

4. A Novel Type of V-Trench SiC-MOSFET and an Improved High-Power Single-Ended Inverter for very Low Loss Operation;2022 International Conference for Advancement in Technology (ICONAT);2022-01-21

5. A Trend of Home and Consumer Appliances in Japan: The Past 50 Years and the Future;IEEJ Transactions on Electrical and Electronic Engineering;2021-02-11

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