A Novel Type of V-Trench SiC-MOSFET and an Improved High-Power Single-Ended Inverter for very Low Loss Operation
Author:
Affiliation:
1. Osaka Institute of Technology,Osaka,Japan
2. National Institute of Advanced Industrial Science and Technology,Ibaraki,Japan
3. Sumitomo Electric Industries, Ltd.,Osaka,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9725432/9725433/09725913.pdf?arnumber=9725913
Reference12 articles.
1. SiC High Channel Mobility Transistors;hiyoshi;SEI Technical Review,0
2. A 3kW Single-Ended Wireless EV Charger with a Newly Developed SiC-VMOSFET
3. A novel type of high power-factor miniaturized wireless ev charger with optimized power receiving circuit and single-ended inverter
4. $1.8{\mathrm{m}}\Omega{\text{cm}}\ 2$, 10A Power MOSFET in 4H-SiC;harada;Electron Devices Meeting 2006 IEDM '06 International,0
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