Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications
Author:
Funder
SK Hynix
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9385573/09355191.pdf?arnumber=9355191
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Antiferroelectric Hf0.25Zr0.75O2 With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition;IEEE Transactions on Electron Devices;2024-02
2. Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film;Advanced Electronic Materials;2024-01-10
3. A flexible Hf0.5Zr0.5O2 thin film with highly robust ferroelectricity;Journal of Materiomics;2024-01
4. Ultralow operating voltage for energy conversion performance in Hf1–Zr O2 thin films;Journal of Materiomics;2024-01
5. Accurate Evaluation of High-k HZO/ZrO2 Films by Morphotropic Phase Boundary;IEEE Electron Device Letters;2024-01
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