High-Frequency Electromagnetic Simulation and Optimization for GaN-HEMT Power Amplifier IC-Reference-Cited by-同舟云学术

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High-Frequency Electromagnetic Simulation and Optimization for GaN-HEMT Power Amplifier IC

Published:2019-04 Issue:2 Volume:61 Page:564-571
ISSN:0018-9375
Container-title:IEEE Transactions on Electromagnetic Compatibility
language:
Short-container-title:IEEE Trans. Electromagn. Compat.

Author:

Sangwan Vivek^ORCID,Kapoor Dipesh^ORCID,Tan Cher Ming^ORCID,Lin Chia Han,Chiu Hsien-Chin^ORCID

Funder

Chang Gung University Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/15/8626742/08360771.pdf?arnumber=8360771

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Parameterized Surrogate Models of Microstrip Structures for Electromagnetic-Based Power Amplifier Design and Statistical Analysis;Proceedings of SIE 2022;2023

2. Coil Design for Integration with GaN Hall-Effect Sensors;2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe);2022-09-18

3. Conjointly Electromagnetic Simulations for Bended Microstrip Antenna Designs;2021 13th International Conference on Electrical and Electronics Engineering (ELECO);2021-11-25

4. C band microwave damage characteristics of pseudomorphic high electron mobility transistor*;Chinese Physics B;2021-09-01

5. Electromagnetic Bottom-Up Optimization for Automated Antenna Designs;2020 IEEE Asia-Pacific Microwave Conference (APMC);2020-12-08

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