Coil Design for Integration with GaN Hall-Effect Sensors
Author:
Affiliation:
1. Institute for Clean Growth and Future Mobility, Coventry University,Centre for Advanced Low Carbon Propulsion Systems,Coventry,UK
Funder
EPSRC UK
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9935821/9936047/09936109.pdf?arnumber=9936109
Reference26 articles.
1. High-Frequency Electromagnetic Simulation and Optimization for GaN-HEMT Power Amplifier IC
2. GaN module design recommendations based on the analysis of a commercial 3-phase GaN module;alex;IEEE Energy Conversion Congress and Exposition (ECCE),2019
3. Analysis of GaN MagHEMTs
4. Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology
5. Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated Temperatures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. TCAD Modelling of Magnetic Hall Effect Sensors;Inventions;2024-07-10
2. GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration;IEEE Access;2024
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