RF Performance of InAlN/GaN HFETs and MOSHFETs With <formula formulatype="inline"><tex Notation="TeX"> $f_{T} \times L_{G}$</tex></formula> up to 21 <formula formulatype="inline"><tex Notation="TeX">$\hbox{GHz}\cdot \mu\hbox{m}$</tex> </formula>-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

RF Performance of InAlN/GaN HFETs and MOSHFETs With $f_{T} \times L_{G}$ up to 21 $\hbox{GHz}\cdot \mu\hbox{m}$

Published:2010-03 Issue:3 Volume:31 Page:180-182
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kordos P.,Mikulics M.,Fox A.,Gregusova D.,Cico K.,Carlin J.-F.,Grandjean N.,Novak J.,Frohlich K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5419202/05398905.pdf?arnumber=5398905

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scaled InAlN/GaN HEMT on Sapphire With f_T/f_max of 190/301 GHz;IEEE Transactions on Electron Devices;2023-06

2. High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application;Semiconductor Science and Technology;2023-02-01

3. L _G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation;International Journal of RF and Microwave Computer-Aided Engineering;2022-07-08

4. Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition;Micro and Nanostructures;2022-05

5. Enhanced gain characteristics of AlGaN/GaN MOS-HEMTs with Al₂O₃ gate dielectric;2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK);2021-11-17

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP