Enhanced gain characteristics of AlGaN/GaN MOS-HEMTs with Al<sub>2</sub>O<sub>3</sub> gate dielectric-Reference-Cited by-同舟云学术

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Enhanced gain characteristics of AlGaN/GaN MOS-HEMTs with Al₂O₃ gate dielectric

Published:2021-11-17 Issue: Volume: Page:
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Container-title:2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK)
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Author:

Shibata K.¹,Herbert K.¹,Kuzuhara M.¹,Baratov A.²,Asubar J. T.²,Wakejima A.³

Affiliation:

1. Kwansei Gakuin University,School of Science and Technology,Hyogo,Japan,699-1337

2. University of Fukui,Graduate School of Engineering,Fukui,Japan,910-8507

3. Nagoya Institute of Technology,Dept. Electrical and Mechanical Engineering,Nagoya,Japan,466-8555

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9637505/9637517/09904016.pdf?arnumber=9904016

Reference5 articles.

1. High-Speed AlN/GaN MOS-HFETs With Scaled ALD $ \hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulators

2. RF Performance of InAlN/GaN HFETs and MOSHFETs With $f_{T} \times L_{G}$ up to 21 $\hbox{GHz}\cdot \mu\hbox{m}$

3. Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric

4. Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

5. AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

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