Design and Analysis of Novel InSb/Si Heterojunction Double Gate Tunnel Field Effect Transistor-Reference-Cited by-同舟云学术

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Design and Analysis of Novel InSb/Si Heterojunction Double Gate Tunnel Field Effect Transistor

Published:2016-07 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)
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Author:

Ahish S.,Sharma Dheeraj,Vasantha M. H.,Kumar Y. B. N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7558446/7560148/07560181.pdf?arnumber=7560181

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of Dual Material Based Dielectric Modulated Heterojunction Double Gate Tunnel FETs with Noise Reduction Analysis for High Frequency Applications;Silicon;2024-04-12

2. InSb Source-Based Heterojunctionless Nanowire Tunneling FET for Biosensing Application: Design and Analysis;2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI);2024-03-14

3. Performance Analysis of InSb Source-Based Heterojunctionless Nanowire TFET for Low-Power Application: Design and Simulation;2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI);2024-03-14

4. Electrical Noise Analysis of Polarity Gate JLTFET;2023 9th International Conference on Signal Processing and Communication (ICSC);2023-12-21

5. Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet;Chinese Physics B;2022-09-01

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