Pulsed Current-Voltage Protocol to Reveal Polarization-Continuation in Ferroelectric Memory: Implications for Partial State Storage
Author:
Affiliation:
1. University of Notre Dame,Dept. of Electrical Engineering,Notre Dame,IN,USA,46556
2. Texas Instruments Incorporated,Dallas,TX,USA,75243
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9855770/9855647/09855808.pdf?arnumber=9855808
Reference7 articles.
1. Programming-Pulse Dependence of Ferroelectric Partial Polarization: Insights From a Comparative Study of PZT and HZO Capacitors
2. Switching Dynamics of Ferroelectric Zr-Doped HfO2
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1. Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide;IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control;2024-02
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