1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes-Reference-Cited by-同舟云学术

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1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes

Published:2002-07 Issue:7 Volume:49 Page:1129-1135
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Po-Hsun Lei ,Chia-Chien Lin ,Wen-Jeng Ho ,Meng-Chyi Wu ,Lih-Wen Laih

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/21820/01013267.pdf?arnumber=1013267

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance;IEEE Journal of Quantum Electronics;2022-04

2. Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer Al_xGa_yIn_1-x-yAs Single Quantum Well Lasers;IEEJ Transactions on Electronics, Information and Systems;2013

3. Study of an AlGaInP-Based Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure;IEEE Photonics Technology Letters;2009-05

4. On an AlGaInP Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure;IEEE Journal of Quantum Electronics;2009-04

5. Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers;SPIE Proceedings;2006-10-18

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