Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer AlxGayIn1-x-yAs Single Quantum Well Lasers-Reference-Cited by-同舟云学术

Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer Al_xGa_yIn_1-x-yAs Single Quantum Well Lasers

Published:2013 Issue:6 Volume:133 Page:1139-1144
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans.EIS

Author:

Sapkota Durga Prasad¹,Kayastha Madhu Sudan¹,Wakita Koichi¹

Affiliation:

1. Chubu University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

https://www.jstage.jst.go.jp/article/ieejeiss/133/6/133_1139/_pdf

Reference19 articles.

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3. (3) R. Bhat, C. E. Zha, M. A. Koza, D-M. D. Hwang, F. J. Favire, and B. Pathak : “ OMCVD growth of strained Al_xGa_yIn_1-x-yAs for low threshold 1.3μm and 1.55μm quantum well lasers”, Proc. 4^th Int. Conf. on InP and related materials, Newport, RI, THD2, pp. 453-456 (1992)

4. (4) T. Nakamura, T. Okuda, R. Kobayashi, Y. Muroya, K. Tsuruoka, Y. Ohsawa, T. Tsukuda, and S. Ishikawa : “1.3-μm AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10-Gb/s operation”, IEEE J. Sel. Top. Quantum Electron, Vol. 11, pp. 141-148 (2005)

5. (5) P. H. Lei, C. C. Lin, W. J. Ho, M. C. Wu, and L. W. Laih : “1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes”, IEEE Trans. Electron Devices, Vol. 49, pp. 1129-1135 (2002)