Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO/sub 2/ tunneling oxide-Reference-Cited by-同舟云学术

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Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO/sub 2/ tunneling oxide

Published:2003-02 Issue:2 Volume:50 Page:510-513
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Dong-Won Kim ,Prins F.E.,Taehoon Kim ,Sungbo Hwang ,Lee C.H.,Dim-Lee Kwong ,Banerjee S.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/26902/01196098.pdf?arnumber=1196098

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