(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics

Author:

Metaferia Wondwosen1ORCID,Chenenko Jason2,Packard Corinne E.1ORCID,Wong Evan W. K.1,Ptak Aaron J.1ORCID,Schulte Kevin L.1ORCID

Affiliation:

1. National Renewable Energy Laboratory, Golden, CO, USA

2. Colorado School of Mines, Golden, CO, USA

Funder

Alliance for Sustainable Energy

National Renewable Energy Laboratory

U.S. Department of Energy

DOE's Office of Energy Efficiency and Renewable Energy

Solar Energy Technologies

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies

2. Controlled spalling of (100)-oriented GaAs with a nanoimprint lithography interlayer for thin-film layer transfer without facet formation;braun;Thin Solid Films,2021

3. High efficiency, low cost thin GaAs solar cells;fan,1982

4. A technique for producing epitaxial films on reuseable substrates

5. High-efficiency GaAs/CuInSe/sub 2/ and AlGaAs/CuInSe/sub 2/ thin-film tandem solar cells

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