A redundancy circuit for a fault-tolerant 256K MOS RAM

Author:

Mano T.,Wada M.,Ieda N.,Tanimoto M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Efficient Memory Repair Using Cache-Based Redundancy;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2012-12

2. Redundancy;Integrated Circuits and Systems;2010-11-26

3. Characterization of granularity and redundancy for SRAMs for optimal yield-per-area;2008 IEEE International Conference on Computer Design;2008-10

4. A BISR Architecture for Embedded Memories;2008 14th IEEE International On-Line Testing Symposium;2008-07

5. A physical design tool for built-in self-repairable RAMs;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2001-04

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