Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors With Excellent Electrical Characteristics-Reference-Cited by-同舟云学术

Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors With Excellent Electrical Characteristics

Published:2023-10 Issue:10 Volume:44 Page:1644-1647
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liang Yan-Kui¹^ORCID,Li Wei-Li¹,Zheng Jun-Yang²,Lin Yu-Lon³,Lu Yu-Cheng²^ORCID,Chiu Ching-Hua²^ORCID,Hsieh Dong-Ru⁴,Chou Tsung-Te⁵,Kei Chi-Chung⁵,Huang Huai-Ying⁶,Lin Yu-Ming⁶^ORCID,Tseng Yuan-Chieh³^ORCID,Chao Tien-Sheng⁴^ORCID,Chang Edward Yi³^ORCID,Lin Chun-Hsiung¹

Affiliation:

1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Industry Academia Innovation School, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

3. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

4. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

5. Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, Taiwan

6. Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan

Funder

Taiwan Semiconductor Manufacturing Company

National Science and Technology Council (NSTC), Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10265125/10236555.pdf?arnumber=10236555

Reference31 articles.

1. Scaling the Si MOSFET: from bulk to SOI to bulk

2. Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

3. Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs

4. Channel Length Scaling Pattern for Cylindrical Surrounding Double-Gate (CSDG) MOSFET

5. Reliability of Atomic-Layer-Deposited Gate-All-Around In₂O₃ Nano-Ribbon Transistors with Ultra-High Drain Currents

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