Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing-Reference-Cited by-同舟云学术

Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing

Published:2023-03 Issue:3 Volume:44 Page:380-383
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Chenlu¹^ORCID,Yan Qinglong¹^ORCID,Su Chunxu¹,Alghamdi Sami²^ORCID,Ghandourah Emad³,Liu Zhihong¹,Feng Xin⁴,Zhang Weihang⁴^ORCID,Dang Kui¹^ORCID,Wang Yingmin⁵,Wang Jian⁵,Zhang Jincheng¹^ORCID,Zhou Hong¹^ORCID,Hao Yue¹^ORCID

Affiliation:

1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China

2. Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah, Saudi Arabia

3. Department of Nuclear Engineering, Faculty of Engineering, King Abdulaziz University, Jeddah, Saudi Arabia

4. Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, China

5. 46th Research Institute, China Electronics Technology Group Corporation, Tianjin, China

Funder

Ministry of Education and King Abdulaziz University, DSR

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10053585/10021595.pdf?arnumber=10021595

Reference34 articles.

1. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

2. 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

3. Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole–Frenkel Emission

4. Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2

5. Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate

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