Analysis of certain electrical properties in Silicon nanowire field-effect transistors with high-κ HfO2 as gate dielectrics-Reference-Cited by-同舟云学术

Analysis of certain electrical properties in Silicon nanowire field-effect transistors with high-κ HfO2 as gate dielectrics

Published:2022-11-26 Issue: Volume: Page:
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Container-title:2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
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Author:

Das Sanat Kr.¹,Chettri Bibek¹,Karki Prasanna¹,Chettri Pronita¹,Deka Utpal²,Sharma Bikash³

Affiliation:

1. Sikkim Manipal Institute of Technology,Department of Physics,Rangpo,India

2. Manipal Institute of Tech., MAHE,Department of Physics,Bengaluru,India

3. Sikkim Manipal Institute of Technology,Dept. of Electronics & Comm. Engg,Rangpo,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10032824/10032825/10032875.pdf?arnumber=10032875

Reference16 articles.

1. Analytical modelling and verification of potential profile of DG JLFET with and without stack oxide;haque;International Journal of Electronics,2020

2. Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors

3. Computational Study of Adsorption behavior of CH4N2O and CH3OH on Fe decorated MoS2 monolayer

4. Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures Chinese;hao;Physics B,2014

5. Silicon Nanowire Field Effect Transistor Sensors with Minimal Sensor-to-Sensor Variations and Enhanced Sensing Characteristics

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1. Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs;Micromachines;2023-08-15

2. Impact of high-k metal oxide as gate dielectric on the certain electrical properties of silicon nanowire field-effect transistors: A simulation study;Facta universitatis - series: Electronics and Energetics;2023