Analysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI Substrates-Reference-Cited by-同舟云学术

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Analysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI Substrates

Published:2019-04 Issue:4 Volume:66 Page:1849-1855
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Weihang^ORCID,Simoen Eddy,Zhao Ming,Zhang Jincheng^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8668593/08657725.pdf?arnumber=8657725

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coexistence of Space Charge Limited and Variable Range Hopping Conduction Mechanism in Sputter-Deposited Au/SiC Metal–Semiconductor–Metal Device;IEEE Transactions on Electron Devices;2023-02

2. Investigation of threshold voltage shift and gate leakage mechanisms in normally off AlN/Al0.05Ga0.95N HEMTs on Si substrate;AIP Advances;2020-11-01

3. Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration;IEEE Transactions on Electron Devices;2020-11

4. Hybrid Lead Iodide Perovskites with Mixed Cations of Thiourea and Methylamine, From One Dimension to Three Dimensions;Inorganic Chemistry;2020-10-13

5. Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates;IEEE Transactions on Electron Devices;2020-10

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