Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation Study-Reference-Cited by-同舟云学术

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Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation Study

Published:2019-05 Issue:5 Volume:66 Page:2151-2157
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ancona M. G.^ORCID,Calame J. P.^ORCID,Meyer D. J.^ORCID,Rajan S.,Downey B. P.

Funder

Office of Naval Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8694031/08674822.pdf?arnumber=8674822

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2. Polarization‐Graded High‐Electron‐Mobility Transistors for Improved Johnson's Figure of Merit;physica status solidi (a);2024-05-21

3. 2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications;Materials Science and Engineering: B;2024-03

4. A review of GaN RF devices and power amplifiers for 5G communication applications;Fundamental Research;2023-11

5. A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications;Microelectronics Journal;2023-10

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