Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method-Reference-Cited by-同舟云学术

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Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method

Published:2019-04 Issue:4 Volume:66 Page:1766-1771
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wu Ming-Hung^ORCID,Lin Horng-Chih^ORCID,Li Pei-Wen^ORCID

Funder

Ministry of Science and Technology, Taiwan

Research of Excellence Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8668593/08643587.pdf?arnumber=8643587

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A low-temperature photoresist-based film-profile engineering scheme for fabricating bottom- and double-gated indium–gallium–zinc oxide TFTs;Japanese Journal of Applied Physics;2024-02-14

2. Extraction of SnO Subbandgap Defect Density by Numerical Modeling of p-Type TFTs;IEEE Transactions on Electron Devices;2022-05

3. Thermo-oxidative stability of SnO crystals and obtained few layer crystals by mechanical exfoliation;Molecular Crystals and Liquid Crystals;2022-01-08

4. 8‐5: Invited Paper: P‐Type Oxide Semiconductors for Displays: Material Design and Field‐Effect Devices;SID Symposium Digest of Technical Papers;2021-05

5. Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices;Advanced Materials;2021-04

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