High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes-Reference-Cited by-同舟云学术

High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes

Published:2019-08 Issue:8 Volume:66 Page:3387-3392
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Monti Desiree^ORCID,De Santi Carlo^ORCID,Da Ruos Silvia,Piva Francesco^ORCID,Glaab Johannes^ORCID,Rass Jens,Einfeldt Sven^ORCID,Mehnke Frank^ORCID,Enslin Johannes,Wernicke Tim,Kneissl Michael^ORCID,Meneghesso Gaudenzio^ORCID,Zanoni Enrico^ORCID,Meneghini Matteo^ORCID

Funder

German Federal Ministry of Education and Research (BMBF) through the consortia project “Advanced UV for Life”

Federal Ministry for Economic Affairs and Energy (BMWi) through the Project “UV-Berlin”

Deutsche Forschungsgemeinschaft

Interdepartmental Centre Giorgio Levi Cases, University of Padova, Padua, Italy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8768425/08758848.pdf?arnumber=8758848

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