Freewheeling Diode Technology With Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications-Reference-Cited by-同舟云学术

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Freewheeling Diode Technology With Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications

Published:2019-11 Issue:11 Volume:66 Page:4842-4849
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nakamura Katsumi^ORCID,Masuoka Fumihito,Nishii Akito,Nishizawa Shin-ichi,Furukawa Akihiko

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8886611/08852709.pdf?arnumber=8852709

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An RC-LIGBT With Dual Self-Driving nMOS For Enhancing Short Circuit Property and Modulating Electron Injection;IEEE Transactions on Electron Devices;2023-12

2. A Novel 1200v Sj-Rfc-Mps with Fast Recovery and Snap-Off-Free;2023

3. A Novel Constant-pulse Scheme for Synchronous Half-bridge Converter Module;2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS);2022-11-11

4. Modeling of High-Voltage Nonpunch-Through PIN Diode Snappy Reverse Recovery and Its Optimal Suppression Method Based on RC Snubber Circuit;IEEE Transactions on Industrial Electronics;2022-06

5. Lifetime Control Free Cathode Side Concept for Si-Based Power Diode Targeting High-Speed Operation and High Dynamic Ruggedness;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

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