A trapping mechanism for autodoping in silicon epitaxy—I. Theory
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31924/01484663.pdf?arnumber=1484663
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Model of boron incorporation into silicon epitaxial film in a B2H6–SiHCl3–H2 system;Journal of Crystal Growth;2001-01
2. Critical review of the epitaxial growth of semiconductors by rapid thermal chemical vapor deposition;Materials Science and Engineering: R: Reports;1997-06
3. Growth-rate-independent dopant transport in silicon epitaxy;Journal of Crystal Growth;1994-08
4. Silicon Epitaxial layers with non-uniform doping profiles (II). The non-uniform doping profile realization;Crystal Research and Technology;1994
5. Silicon Epitaxial Layers with Non-Uniform Doping Profiles (I). The Model Parameters' Adjustment;Crystal Research and Technology;1993
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