Silicon Epitaxial Layers with Non-Uniform Doping Profiles (I). The Model Parameters' Adjustment
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
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1. Model of boron incorporation into silicon epitaxial film in a B2H6–SiHCl3–H2 system;Journal of Crystal Growth;2001-01
2. Effect of Transport Phenomena on Boron Concentration Profiles in Silicon Epitaxial Wafers;Journal of The Electrochemical Society;1996-02-01
3. Growth-rate-independent dopant transport in silicon epitaxy;Journal of Crystal Growth;1994-08
4. Silicon Epitaxial layers with non-uniform doping profiles (II). The non-uniform doping profile realization;Crystal Research and Technology;1994
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